IndiumV3, Main, Repository, bibRecord, 008144

Thermal diffusion of indium in perylenetetracarboxylic dianhydride

Identifieur interne : 008144 ( Main/Repository ); précédent : 008143; suivant : 008145

Thermal diffusion of indium in perylenetetracarboxylic dianhydride

Auteurs : RBID : Pascal:06-0211023

Descripteurs français

Pascal (Inist)
- Diffusion thermique, Caractéristique courant tension, Point fusion, Rayonnement synchrotron, Spectre photoélectron, Epaisseur, Effet redresseur, Interface, Loi Ohm, Argent, Anhydride organique, Hétérostructure, Couche épaisse, In, Pérylène tétracarboxylique acide dérivé, Si, 7340, 6630X.
Wicri :
- concept : Argent.

English descriptors

KwdEn :
- Heterostructures, IV characteristic, Interfaces, Melting points, Ohm law, Organic anhydride, Photoelectron spectra, Rectification, Silver, Synchrotron radiation, Thermal diffusion, Thick films, Thickness.

Abstract

Current-voltage (I-V) characteristic measurements of Ag/3,4,9,10-Perylenetetracarboxylic Dianhydride/In/Si(001) heterostructures demonstrate that when the structure temperature approaches the In melting point the I-V characteristic changes from rectifying to Ohmic and the current amplitude increases by several orders of magnitude. The synchrotron radiation photoemission investigation of the 3,4,9,10-Perylenetetracarboxylic Dianhydride (PTCDA) layers of the same thickness grown on In in the same temperature range show strong In diffusion throughout the PTCDA layers as thick as 1 μm. The In₄PTCDA coordination compound was not observed on the PTCDA surface and it appears to be limited to the region near the In/PTCDA interface [1].

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Le document en format XML

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<author><name sortKey="Hudej, R" uniqKey="Hudej R">R. Hudej</name>
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<s2>34014 Trieste</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
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<country>Italie</country>
<wicri:noRegion>34014 Trieste</wicri:noRegion>
</affiliation>
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<author><name sortKey="Bratina, G" uniqKey="Bratina G">G. Bratina</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Nova Gorica Polytechnic, Vipavska 13</s1>
<s2>5000 Nova Gorica</s2>
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<idno type="stanalyst">PASCAL 06-0211023 INIST</idno>
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<title level="j" type="abbreviated">J. phys., IV</title>
<title level="j" type="main">Journal de physique. IV</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Heterostructures</term>
<term>IV characteristic</term>
<term>Interfaces</term>
<term>Melting points</term>
<term>Ohm law</term>
<term>Organic anhydride</term>
<term>Photoelectron spectra</term>
<term>Rectification</term>
<term>Silver</term>
<term>Synchrotron radiation</term>
<term>Thermal diffusion</term>
<term>Thick films</term>
<term>Thickness</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Diffusion thermique</term>
<term>Caractéristique courant tension</term>
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<front><div type="abstract" xml:lang="en">Current-voltage (I-V) characteristic measurements of Ag/3,4,9,10-Perylenetetracarboxylic Dianhydride/In/Si(001) heterostructures demonstrate that when the structure temperature approaches the In melting point the I-V characteristic changes from rectifying to Ohmic and the current amplitude increases by several orders of magnitude. The synchrotron radiation photoemission investigation of the 3,4,9,10-Perylenetetracarboxylic Dianhydride (PTCDA) layers of the same thickness grown on In in the same temperature range show strong In diffusion throughout the PTCDA layers as thick as 1 μm. The In<sub>4</sub>
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Thermal diffusion of indium in perylenetetracarboxylic dianhydride

Thermal diffusion of indium in perylenetetracarboxylic dianhydride

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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